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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Zhiqiang Li
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Zhiqiang Li:

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - gebunden oder broschiert

ISBN: 9783662496817

ID: 9783662496817

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600_and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10_7_-cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node. The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices: This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600_and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10_7_-cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node. Festkörperphysik Elektronik / Halbleiter Halbleiter Leitung (physikalisch) / Halbleiter TECHNOLOGY & ENGINEERING / Electronics / Semiconductors, Springer-Verlag Gmbh

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Li, Zhiqiang
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Li, Zhiqiang:

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - neues Buch

ISBN: 9783662496817

ID: 651704705

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10-7 -cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node. This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10-7 -cm2, Buch > Mathematik, Naturwissenschaft & Technik > Technik, Springer, Berlin; Springer Berlin Heidelberg

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Zhiqiang Li
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Zhiqiang Li:
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - neues Buch

ISBN: 9783662496817

[ED: Buch], [PU: Springer-Verlag GmbH], Neuware - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.810-7O.cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node., [SC: 0.00], Neuware, gewerbliches Angebot, 244x159x12 mm, [GW: 271g]

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Zhiqiang Li
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Zhiqiang Li:
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - neues Buch

1, ISBN: 9783662496817

[ED: Buch], [PU: Springer-Verlag GmbH], Neuware - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.810-7O.cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node., [SC: 0.00], Neuware, gewerbliches Angebot, FixedPrice, [GW: 276g]

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Li, Zhiqiang
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(*)
Li, Zhiqiang:
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - gebunden oder broschiert

2016, ISBN: 366249681X

ID: A26370598

Gebundene Ausgabe Festkörperphysik, Elektronik / Halbleiter, Halbleiter, Leitung (physikalisch) / Halbleiter, TECHNOLOGY & ENGINEERING / Electronics / Semiconductors, mit Schutzumschlag neu, [PU:Springer-Verlag GmbH]

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REDIVIVUS Buchhandlung Hanausch Reinhard, 93053 Regensburg
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Details zum Buch
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Autor:

Zhiqiang Li

Titel:

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

ISBN-Nummer:

9783662496817

Detailangaben zum Buch - The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices


EAN (ISBN-13): 9783662496817
ISBN (ISBN-10): 366249681X
Gebundene Ausgabe
Erscheinungsjahr: 1
Herausgeber: Springer-Verlag Gmbh

Buch in der Datenbank seit 08.03.2016 20:29:30
Buch zuletzt gefunden am 07.01.2017 16:26:42
ISBN/EAN: 9783662496817

ISBN - alternative Schreibweisen:
3-662-49681-X, 978-3-662-49681-7

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