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Simulation of Semiconductor Processes and Devices 1998 - SISPAD 98
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)

Simulation of Semiconductor Processes and Devices 1998 - SISPAD 98 - Taschenbuch

2012, ISBN: 9783709174159

[ED: Taschenbuch / Paperback], [PU: Springer, Berlin Springer, Wien], AUSFÜHRLICHERE BESCHREIBUNG: This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: semiconductor equipment simulation process modeling and simulation device modeling and simulation of complex structures interconnect modeling integrated systems for process, device, circuit simulation and optimisation numerical methods and algorithms compact modeling and parameter extraction modeling for RF applications simulation and modeling of new devices (heterojunction based, SET s, quantum effect devices, laser based ...) INHALT: TCAD in SRC.- TCAD in Selete.- Integration of Lithography and Etch Simulations.- Integrated Three-Dimensional Topography Simulation and Its Application to Dual-Damascene Processing.- Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation.- Development of a Gas-Phase Chemistry Model for Numerical Prediction of MOVPE of GaN in Industrial Scale Reactors.- Modeling of Flow and Heat Transfer in a Vertical Reactor for the MOCVD of Zirconium-Based Coatings.- Design Optimization of RF Power MOSFET s Using Large Signal Analysis Device Simulation of Matching Networks.- Modeling of Temperature Dependence of Floating Pad Structure s RF Properties.- A Comprehensive Model of a VLSI Spiral Inductor Derived from the First Principles.- Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors.- Extension of Spherical Harmonic Method to RF Transient Regime.- Multiscale Modeling of the Implantation and Annealing of Silicon Devices.- Dynamics of Arsenic Dose Loss at the SiO2 Interface during TED.- Damage Accumulation by Arsenic Ion Implantation and Its Impact on Transient Enhanced Diffusion of As and B.- A Simple Continuum Model for Simulation of Boron Interstitial Clusters Based on Atomistic Calculations.- Electromagnetic Simulation for the Modeling of Interconnects.- Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction.- Exponential Expansion for Rapid and Accurate Extraction of Interconnect Capacitance.- Rigorous Capacitance Simulation of DRAM Cells.- A Hybrid Technique for TCAD Modeling and Optimization.- A Qualitative Study on Optimized MOSFET Doping Profiles.- Modeling Process and Transistor Variation for Circuit Performance Analysis.- Statistical Modeling Based on Extensive TCAD Simulations: Proposed Methodology for Extraction of Fast/Slow Models and Statistical Models..- Parallel and Distributed TCAD Simulations Using Dynamic Load Balance.- Device Simulator Calibration for Quartermicron CMOS Devices.- Automatic Mesh Refinement for 3D Numerical Simulation of Thermal Diffusion in Silicon.- A Common Mesh Implementation for Both Static and Moving Boundary Process Simulations.- A Dopant-Dependent Band Gap Narrowing Model: Application for Bipolar Device Simulation.- Improved Modelling of Bandgap-Narrowing Effects in Silicon p+/n+ Junctions.- Simulation of Electron Mobility in Ultrathin Fully Depleted Single Gate SOI MOSFETs.- Simplified Simulator for Neutron-Induced Soft Errors Based on Modified BGR Model.- Quantum Effects in the Simulation of Conventional Devices.- Efficient Quantum Correction Model for Multi-Dimensional CMOS Simulations.- The Role of Quantization Effects in Inversion Hole Layers of Tunnel MOS Structures on n-Si Substrates.- Multi-Dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques.- Microsystems CAD: from FEM to System Simulation.- Methods for Model Generation and Parameter Extraction for MEMS.- A Heterogeneous Environment for Computational Prototyping and Simulation Based Design of MEMS Devices.- Bias-Dependent Low-Frequency Noise Model for Low Phase Noise InP HEMT based MMIC Oscillator Design.- 3D Modeling of Sputter Process with Monte Carlo Method.- Effects of Scaling and Lattice Heating on n-MOSFET Performance via Electrothermal Monte Carlo Simulation.- Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT.- Monte Carlo Modelling of Spin Relaxation in a III-V Two Dimensional Electron Channel.- Combining the Scattering Matrix and Spherical Harmonic Methods for Semiconductor Modeling.- Discretization of the Brillouin Zone by an Octree/Delaunay Method with Application to Full-Band Monte Carlo Transport Simulation.- A Hybrid Approach for Building 2D and 3D Conforming Delaunay Meshes Suitable for Process and Device Simulation.- Improving the Quality of Delaunay Triangulations for the Control Volume Discretization Method.- Th, [SC: 0.00], Neuware, gewerbliches Angebot, H: 235mm, B: 155mm

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Simulation of Semiconductor Processes and Devices 1998 - SISPAD 98
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Simulation of Semiconductor Processes and Devices 1998 - SISPAD 98 - Taschenbuch

2012, ISBN: 9783709174159

[ED: Taschenbuch / Paperback], [PU: Springer, Berlin Springer, Wien], AUSFÜHRLICHERE BESCHREIBUNG: This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: semiconductor equipment simulation process modeling and simulation device modeling and simulation of complex structures interconnect modeling integrated systems for process, device, circuit simulation and optimisation numerical methods and algorithms compact modeling and parameter extraction modeling for RF applications simulation and modeling of new devices (heterojunction based, SET s, quantum effect devices, laser based ...) INHALT: TCAD in SRC.- TCAD in Selete.- Integration of Lithography and Etch Simulations.- Integrated Three-Dimensional Topography Simulation and Its Application to Dual-Damascene Processing.- Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation.- Development of a Gas-Phase Chemistry Model for Numerical Prediction of MOVPE of GaN in Industrial Scale Reactors.- Modeling of Flow and Heat Transfer in a Vertical Reactor for the MOCVD of Zirconium-Based Coatings.- Design Optimization of RF Power MOSFET s Using Large Signal Analysis Device Simulation of Matching Networks.- Modeling of Temperature Dependence of Floating Pad Structure s RF Properties.- A Comprehensive Model of a VLSI Spiral Inductor Derived from the First Principles.- Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors.- Extension of Spherical Harmonic Method to RF Transient Regime.- Multiscale Modeling of the Implantation and Annealing of Silicon Devices.- Dynamics of Arsenic Dose Loss at the SiO2 Interface during TED.- Damage Accumulation by Arsenic Ion Implantation and Its Impact on Transient Enhanced Diffusion of As and B.- A Simple Continuum Model for Simulation of Boron Interstitial Clusters Based on Atomistic Calculations.- Electromagnetic Simulation for the Modeling of Interconnects.- Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction.- Exponential Expansion for Rapid and Accurate Extraction of Interconnect Capacitance.- Rigorous Capacitance Simulation of DRAM Cells.- A Hybrid Technique for TCAD Modeling and Optimization.- A Qualitative Study on Optimized MOSFET Doping Profiles.- Modeling Process and Transistor Variation for Circuit Performance Analysis.- Statistical Modeling Based on Extensive TCAD Simulations: Proposed Methodology for Extraction of Fast/Slow Models and Statistical Models..- Parallel and Distributed TCAD Simulations Using Dynamic Load Balance.- Device Simulator Calibration for Quartermicron CMOS Devices.- Automatic Mesh Refinement for 3D Numerical Simulation of Thermal Diffusion in Silicon.- A Common Mesh Implementation for Both Static and Moving Boundary Process Simulations.- A Dopant-Dependent Band Gap Narrowing Model: Application for Bipolar Device Simulation.- Improved Modelling of Bandgap-Narrowing Effects in Silicon p+/n+ Junctions.- Simulation of Electron Mobility in Ultrathin Fully Depleted Single Gate SOI MOSFETs.- Simplified Simulator for Neutron-Induced Soft Errors Based on Modified BGR Model.- Quantum Effects in the Simulation of Conventional Devices.- Efficient Quantum Correction Model for Multi-Dimensional CMOS Simulations.- The Role of Quantization Effects in Inversion Hole Layers of Tunnel MOS Structures on n-Si Substrates.- Multi-Dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques.- Microsystems CAD: from FEM to System Simulation.- Methods for Model Generation and Parameter Extraction for MEMS.- A Heterogeneous Environment for Computational Prototyping and Simulation Based Design of MEMS Devices.- Bias-Dependent Low-Frequency Noise Model for Low Phase Noise InP HEMT based MMIC Oscillator Design.- 3D Modeling of Sputter Process with Monte Carlo Method.- Effects of Scaling and Lattice Heating on n-MOSFET Performance via Electrothermal Monte Carlo Simulation.- Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT.- Monte Carlo Modelling of Spin Relaxation in a III-V Two Dimensional Electron Channel.- Combining the Scattering Matrix and Spherical Harmonic Methods for Semiconductor Modeling.- Discretization of the Brillouin Zone by an Octree/Delaunay Method with Application to Full-Band Monte Carlo Transport Simulation.- A Hybrid Approach for Building 2D and 3D Conforming Delaunay Meshes Suitable for Process and Device Simulation.- Improving the Quality of Delaunay Triangulations for the Control Volume Discretization Method.- Th, Neuware, gewerbliches Angebot, H: 235mm, B: 155mm

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Simulation of Semiconductor Processes and Devices 1998 - Meyer, Kristin De / Biesemans, Serge
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Meyer, Kristin De / Biesemans, Serge:
Simulation of Semiconductor Processes and Devices 1998 - neues Buch

ISBN: 3709174155

ID: 20063329549

[EAN: 9783709174159], Neubuch, Publisher/Verlag: Springer, Wien | SISPAD 98 | This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices.Topics include:- semiconductor equipment simulation- process modeling and simulation- device modeling and simulation of complex structures- interconnect modeling- integrated systems for process, device, circuit simulation and optimisation- numerical methods and algorithms- compact modeling and parameter extraction- modeling for RF applications- simulation and modeling of new devices (heterojunction based, SET's, quantum effect devices, laser based .) | 'TCAD in SRC.- TCAD in Selete.- Integration of Lithography and Etch Simulations.- Integrated Three-Dimensional Topography Simulation and Its Application to Dual-Damascene Processing.- Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation.- Development of a Gas-Phase Chemistry Model for Numerical Prediction of MOVPE of GaN in Industrial Scale Reactors.- Modeling of Flow and Heat Transfer in a Vertical Reactor for the MOCVD of Zirconium-Based Coatings.- Design Optimization of RF Power MOSFET's Using Large Signal Analysis Device Simulation of Matching Networks.- Modeling of Temperature Dependence of Floating Pad Structure's RF Properties.- A Comprehensive Model of a VLSI Spiral Inductor Derived from the First Principles.- Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors.- Extension of Spherical Harmonic Method to RF Transient Regime.- Multiscale Modeling of the Implantation and Annealing of Silicon Devices.- Dynamics of Arsenic Dose Loss at the SiO2 Interface during TED.- Damage Accumulation by Arsenic Ion Implantation and Its Impact on Transient Enhanced Diffusion of As and B.- A Simple Continuum Model for Simulation of Boron Interstitial Clusters Based on Atomistic Calculations.- Electromagnetic Simulation for the Modeling of Interconnects.- Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction.- Exponential Expansion for Rapid and Accurate Extraction of Interconnect Capacitance.- Rigorous Capacitance Simulation of DRAM Cells.- A Hybrid Technique for TCAD Modeling and Optimization.- A Qualitative Study on Optimized MOSFET Doping Profiles.- Modeling Process and Transistor Variation for Circuit Performance Analysis.- Statistical Modeling Based on Extensive TCAD Simulations: Proposed Methodology for Extraction of Fast/Slow Models and Statistical Models.- Parallel and Distributed TCAD Simulations Using Dynamic Load Balance.- Device Simulator Calibration for Quartermicron CMOS Devices.- Automatic Mesh Refinement for 3D Numerical Simulation of Thermal Diffusion in Silicon.- A Common Mesh Implementation for Both Static and Moving Boundary Process Simulations.- A Dopant-Dependent Band Gap Narrowing Model: Application for Bipolar Device Simulation.- Improved Modelling of Bandgap-Narrowing Effects in Silicon p+/n+ Junctions.- Simulation of Electron Mobility in Ultrathin Fully Depleted Single Gate SOI MOSFETs.- Simplified Simulator for Neutron-Induced Soft Errors Based on Modified BGR Model.- Quantum Effects in the Simulation of Conventional Devices.- Efficient Quantum Correction Model for Multi-Dimensional CMOS Simulations.- The Role of Quantization Effects in Inversion Hole Layers of Tunnel MOS Structures on n-Si Substrates.- Multi-Dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques.- Microsystems CAD: from FEM to System Simulation.- Methods for Model Generation and Parameter Extraction for MEMS.- A Heterogeneous Environment for Computational Prototyping and Simulation Based Design of MEMS Devices.- Bias-Dependent Low-Frequency Noise Model for Low Phase Noise InP HEMT based MMIC Oscillator Design.-

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Simulation Of Semiconductor Processes And Devices
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Simulation Of Semiconductor Processes And Devices - neues Buch

ISBN: 9783709174159

ID: 18133380

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: * semiconductor equipment simulation * process modeling and simulation * device modeling and. This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: * semiconductor equipment simulation * process modeling and simulation * device modeling and simulation of complex structures * interconnect modeling * integrated systems for process, device, circuit simulation and optimisation * numerical methods and algorithms * compact modeling and parameter extraction * modeling for RF applications * simulation and modeling of new devices (heterojunction based, SET's, quantum effect devices, laser based.) Books, Technology, Engineering and Agriculture~~Electronicsl and Communications Engineering~~Electronics Engineering, Simulation Of Semiconductor Processes And Devices~~Book~~9783709174159, , , , , , , , , ,

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Simulation of Semiconductor Processes and Devices 1998 - Kristin De Meyer; Serge Biesemans
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Kristin De Meyer; Serge Biesemans:
Simulation of Semiconductor Processes and Devices 1998 - Taschenbuch

2012, ISBN: 9783709174159

ID: 27911357

SISPAD 98, Softcover reprint of the original 1st ed. 1998, Softcover, Buch, [PU: Springer Wien]

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Simulation of Semiconductor Processes and Devices 1998: SISPAD 98
Autor:

Kristin De Meyer (Editor), Serge Biesemans (Editor)

Titel:

Simulation of Semiconductor Processes and Devices 1998: SISPAD 98

ISBN-Nummer:

9783709174159

Detailangaben zum Buch - Simulation of Semiconductor Processes and Devices 1998: SISPAD 98


EAN (ISBN-13): 9783709174159
ISBN (ISBN-10): 3709174155
Taschenbuch
Erscheinungsjahr: 2012
Herausgeber: Springer Vienna

Buch in der Datenbank seit 10.10.2014 10:08:08
Buch zuletzt gefunden am 13.01.2017 12:11:38
ISBN/EAN: 9783709174159

ISBN - alternative Schreibweisen:
3-7091-7415-5, 978-3-7091-7415-9

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