ISBN: 9783896853752

[ED: Softcover], [PU: Wissenschaft & Technik Verlag, Inhaber Dr. Jrgen Groá / Wissenschaft + Technik Ve], The group III nitrides GaN, InN and AIN and its related ternary and quaternary al… Mehr…

[ED: Softcover], [PU: Wissenschaft & Technik Verlag, Inhaber Dr. Jrgen Groá / Wissenschaft + Technik Ve], The group III nitrides GaN, InN and AIN and its related ternary and quaternary alloys have emerged as important matrials for the development of optoelectronic devices such as light emitting devices, laser diodes and detectors. The technological progress culminated in the fabrication of the first continuous-wave laser diode at room temperture for the ultraviolet spectral range in 1996. Some major physical problems appearing for the group III nitrides had to be solved for this and gave rise to the investigation reported in this work. Here, the main focus is on the optical, vibrational and crystalline properties of various nitride structures. Different optical methods, such as (resonant) Raman scattering, (time-resolved) photoluminescence spectroscopy and cathodoluminescence microscopy, were applied. The hole concentration of Mg-doped GaN is limited to some 1018 cm-3 due to self compensation. The energetic position of the compensating donor levels could be determined as 240, 350 and 850 meV, respectively, below the conduction band. Furthermore, it is known that hydrogen compensates the Mg-acceptors, which makes a post-growth treatment necessary. Compensation by the formation of MgGa-N-H-complexes can be monitored by obsering a local vibrational mode at 3125 cm-1. However, a variety of modes around 2200cm-1 and in the range of the host phonons appears only for p-conducting GaN. The lack of a proper substrate material for the heteroepitaxy of GaN lead to the development of the epitaxial lateral overgrowth method in order to produce material with low dislocation density. 186 Seiten - 21 x 15 cm Sofort lieferbar, DE, [SC: 0.00], Neuware, gewerbliches Angebot, Offene Rechnung (Vorkasse vorbehalten)<

2001, ISBN: 9783896853752

a cura di: Thomsen, C. a cura di: Bimberg, D. a cura di: Dähne, M. Wissenschaft + Technik Ve, Copertina flessibile, 186 Seiten, Publiziert: 2001-10-01T00:00:01Z, Produktgruppe: Libro, 0.5… Mehr…

a cura di: Thomsen, C. a cura di: Bimberg, D. a cura di: Dähne, M. Wissenschaft + Technik Ve, Copertina flessibile, 186 Seiten, Publiziert: 2001-10-01T00:00:01Z, Produktgruppe: Libro, 0.53 kg, Categorie, Libri, Wissenschaft + Technik Ve, 2001<

2001, ISBN: 3896853759

[EAN: 9783896853752], Neubuch, [SC: 0.0], [PU: Wissenschaft & Technik Ve Okt 2001], ANORGANISCHE CHEMIE; CHEMIE (ANORGANISCH), Neuware - 186 pp. Deutsch

2001, ISBN: 3896853759

[EAN: 9783896853752], Neubuch, [PU: Wissenschaft + Technik Ve, N/A], Language: German. Brand new Book.

2001, ISBN: 3896853759

[EAN: 9783896853752], Neubuch, [PU: Wissenschaft + Technik Ve], German language. 8.07x5.79x0.47 inches. In Stock.