[EAN: 9787560338712], Neubuch, [PU: Harbin Institute of Technology Press], SPRINGER HANDBOOK OF CRYSTAL GROWTH (ENGLISH EDITION), Pages:182 Format:23 x 18.4 x 1.4 cm Weight: 399 g Languag… Mehr…
[EAN: 9787560338712], Neubuch, [PU: Harbin Institute of Technology Press], SPRINGER HANDBOOK OF CRYSTAL GROWTH (ENGLISH EDITION), Pages:182 Format:23 x 18.4 x 1.4 cm Weight: 399 g Language: English Part A Fundamentals of Crystal Growth and Defect Formation 1 Crystal Growth Techniques and Characterization:An Overview 2 Nucleation at Surfaces 3 Morphology of Crystals Grown from Solutions 4 Generation and Propagation of Defects During Crystal Growth 5 Single Crystals Grown Under Unconstrained Conditions 6 Defect Formation During Crystal Growth from the Melt Part B Crystal Growth from Melt Techniques 7 Indium Phosphide: Crystal Growth and Defect Control by Applying Steady Magnetic Fields 8 Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applications 9 Czochralski Growth of Oxide Photorefractive Crystals 10 Bulk Crystal Growth of Ternary 111- V Semiconductors 11 Growth and Characterization of Antimony-Based Narrow-Bandgap III-V Semiconductor Crystals for Infrared Detector Applications 12 Crystal Growth of Oxides by Optical Floating Zone Technique 13 Laser-Heated Pedestal Growth of Oxide Fibers 14 Synthesis of Refractory Materials by Skull Melting Technique 15 Crystal Growth of Laser Host Fluorides and Oxides 16 Shaped Crystal Growth Part C Solution Growth of Crystals 17 Bulk Single Crystals Grown from Solution on Earth and in Microgravity 18 Hydrothermal Growth of Polyscale Crystals 19 Hydrothermal and Ammonothermal Growth of ZnO and GaN 20 Stoichiometry and Domain Structure of KTP-Type Nonlinear Optical Crystals 21 High-Temperature Solution Growth:Application to Laser and Nonlinear Optical Crystals 22 Growth and Characterization of KDP and Its Analogs Part D Crystal Growth from Vapor 23 Growth and Characterization of Silicon Carbide Crystals 24 A1N Bulk Crystal Growth by Physical Vapor Transport 25 Growth of Single-Crystal Organic Semiconductors 26 Growth of Ⅲ-Nitrides with Halide Vapor Phase Epitaxy(HVPE) 27 Growth of Semiconductor Single Crystals from Vapor Phase Part E Epitaxial Growth and Thin Films 28 Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition 29 Liquid-Phase Electroepitaxy of Semiconductors 30 Epitaxial Lateral Overgrowth of Semiconductors 31 Liquid-Phase Epitaxy of Advanced Materials 32 Molecular-Beam Epitaxial Growth of HgCdTe 33 Metalorganic Vapor-Phase Epitaxy of Diluted Nitrides and Arsenide Quantum Dots 34 Formation of SiGe Heterostructures and Their Properties 35 Plasma Energetics in Pulsed Laser and Pulsed Electron Deposition Part F Modeling in Crystal Growth and Defects 36 Convection and Control in Melt Growth of Bulk Crystals 37 Vapor Growth of Ⅲ Nitrides 38 Continuum-Scale Quantitative Defect Dynamics in Growing Czochralski Silicon Crystals 39 Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth 40 Mass and Heat Transport in BS and EFG Systems Part G Defects Characterization and Techniques 41 Crystalline Layer Structures with X-Ray Diffractometry 42 X-Ray Topography Techniques for Defect Characterization of Crystals 43 Defect-Selective Etching of Semiconductors 44 Transmission Electron Microscopy Characterization of Crystals 45 Electron Paramagnetic Resonance Characterization of Point Defects 46 Defect Characterization in Semiconductors with Positron Annihilation Spectroscopy Part H Special Topics in Crystal Growth 47 Protein Crystal Growth Methods 48 Crystallization from Gels 49 Crystal Growth and Ion Exchange in Titanium Silicates 50 Single-Crystal Scintillation Materials 51 Silicon Solar Cells: Materials, Devices, and Manufacturing 52 Wafer Manufacturing and Slicing Using Wiresaw Subject Index<
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[EAN: 9787560338712], Neubuch, [PU: Harbin Institute of Technology Press], SPRINGER HANDBOOK OF CRYSTAL GROWTH (ENGLISH EDITION), Pages:182 Format:23 x 18.4 x 1.4 cm Weight: 399 g Languag… Mehr…
[EAN: 9787560338712], Neubuch, [PU: Harbin Institute of Technology Press], SPRINGER HANDBOOK OF CRYSTAL GROWTH (ENGLISH EDITION), Pages:182 Format:23 x 18.4 x 1.4 cm Weight: 399 g Language: English Part A Fundamentals of Crystal Growth and Defect Formation 1 Crystal Growth Techniques and Characterization:An Overview 2 Nucleation at Surfaces 3 Morphology of Crystals Grown from Solutions 4 Generation and Propagation of Defects During Crystal Growth 5 Single Crystals Grown Under Unconstrained Conditions 6 Defect Formation During Crystal Growth from the Melt Part B Crystal Growth from Melt Techniques 7 Indium Phosphide: Crystal Growth and Defect Control by Applying Steady Magnetic Fields 8 Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applications 9 Czochralski Growth of Oxide Photorefractive Crystals 10 Bulk Crystal Growth of Ternary 111- V Semiconductors 11 Growth and Characterization of Antimony-Based Narrow-Bandgap III-V Semiconductor Crystals for Infrared Detector Applications 12 Crystal Growth of Oxides by Optical Floating Zone Technique 13 Laser-Heated Pedestal Growth of Oxide Fibers 14 Synthesis of Refractory Materials by Skull Melting Technique 15 Crystal Growth of Laser Host Fluorides and Oxides 16 Shaped Crystal Growth Part C Solution Growth of Crystals 17 Bulk Single Crystals Grown from Solution on Earth and in Microgravity 18 Hydrothermal Growth of Polyscale Crystals 19 Hydrothermal and Ammonothermal Growth of ZnO and GaN 20 Stoichiometry and Domain Structure of KTP-Type Nonlinear Optical Crystals 21 High-Temperature Solution Growth:Application to Laser and Nonlinear Optical Crystals 22 Growth and Characterization of KDP and Its Analogs Part D Crystal Growth from Vapor 23 Growth and Characterization of Silicon Carbide Crystals 24 A1N Bulk Crystal Growth by Physical Vapor Transport 25 Growth of Single-Crystal Organic Semiconductors 26 Growth of Ⅲ-Nitrides with Halide Vapor Phase Epitaxy(HVPE) 27 Growth of Semiconductor Single Crystals from Vapor Phase Part E Epitaxial Growth and Thin Films 28 Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition 29 Liquid-Phase Electroepitaxy of Semiconductors 30 Epitaxial Lateral Overgrowth of Semiconductors 31 Liquid-Phase Epitaxy of Advanced Materials 32 Molecular-Beam Epitaxial Growth of HgCdTe 33 Metalorganic Vapor-Phase Epitaxy of Diluted Nitrides and Arsenide Quantum Dots 34 Formation of SiGe Heterostructures and Their Properties 35 Plasma Energetics in Pulsed Laser and Pulsed Electron Deposition Part F Modeling in Crystal Growth and Defects 36 Convection and Control in Melt Growth of Bulk Crystals 37 Vapor Growth of Ⅲ Nitrides 38 Continuum-Scale Quantitative Defect Dynamics in Growing Czochralski Silicon Crystals 39 Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth 40 Mass and Heat Transport in BS and EFG Systems Part G Defects Characterization and Techniques 41 Crystalline Layer Structures with X-Ray Diffractometry 42 X-Ray Topography Techniques for Defect Characterization of Crystals 43 Defect-Selective Etching of Semiconductors 44 Transmission Electron Microscopy Characterization of Crystals 45 Electron Paramagnetic Resonance Characterization of Point Defects 46 Defect Characterization in Semiconductors with Positron Annihilation Spectroscopy Part H Special Topics in Crystal Growth 47 Protein Crystal Growth Methods 48 Crystallization from Gels 49 Crystal Growth and Ion Exchange in Titanium Silicates 50 Single-Crystal Scintillation Materials 51 Silicon Solar Cells: Materials, Devices, and Manufacturing 52 Wafer Manufacturing and Slicing Using Wiresaw Subject Index<
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