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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Timm Höhr
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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Taschenbuch

ISBN: 3866280874

[SR: 3286698], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility., 54071011, Genres, 60447011, Architektur, Technik & Ingenieurswesen, 66034011, Belletristik, 56797011, Biografien & Erinnerungen, 58173011, Business, Karriere & Geld, 65981011, Comics, Mangas & Graphic Novels, 62991011, Computer & Internet, 54072011, Eltern & Familie, 56047011, Fachbücher, 57127011, Fantasy & Science Fiction, 65677011, Freizeit, Haus & Garten, 65140011, Geschichte, 64617011, Gesundheit, Geist & Körper, 59283011, Jugendbücher, 53817011, Kalender, 61180011, Kinderbücher, 64085011, Kochen & Genießen, 68333011, Krimis & Thriller, 59670011, Kunst & Fotografie, 54127011, Lernen & Nachschlagen, 55555011, Liebesromane & -erzählungen, 56535011, Medizin, 53965011, Musiknoten, 65108011, Outdoor, Umwelt & Natur, 63925011, Recht, 58645011, Reise & Abenteuer, 54682011, Religion & Esoterik, 69028011, Sachbücher, 65636011, Schwul & Lesbisch, 58390011, Sport & Fitness, 64226011, Unterhaltung & Kultur, 52044011, Fremdsprachige Bücher

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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Timm Höhr
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Taschenbuch

ISBN: 3866280874

[SR: 3630700], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility., 54071011, Genres, 60447011, Architektur, Technik & Ingenieurswesen, 66034011, Belletristik, 56797011, Biografien & Erinnerungen, 58173011, Business, Karriere & Geld, 65981011, Comics, Mangas & Graphic Novels, 62991011, Computer & Internet, 54072011, Eltern & Familie, 57127011, Fantasy & Science Fiction, 65677011, Freizeit, Haus & Garten, 65140011, Geschichte, 64617011, Gesundheit, Geist & Körper, 59283011, Jugendbücher, 53817011, Kalender, 61180011, Kinderbücher, 64085011, Kochen & Genießen, 68333011, Krimis & Thriller, 59670011, Kunst & Fotografie, 54127011, Lernen & Nachschlagen, 55555011, Liebesromane & -erzählungen, 56535011, Medizin, 53965011, Musiknoten, 65108011, Outdoor, Umwelt & Natur, 63925011, Recht, 58645011, Reise & Abenteuer, 54682011, Religion & Esoterik, 69028011, Sachbücher, 65636011, Schwul & Lesbisch, 58390011, Sport & Fitness, 64226011, Unterhaltung & Kultur, 56047011, Wissenschaft, 52044011, Fremdsprachige Bücher

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Timm Höhr
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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Taschenbuch

ISBN: 3866280874

Paperback, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, 1025612, Subjects, 349777011, Antiquarian, Rare & Collectable, 91, Art, Architecture & Photography, 51, Audio Cassettes, 267859, Audio CDs, 67, Biography, 68, Business, Finance & Law, 507848, Calendars, Diaries, Annuals & More, 69, Children's Books, 274081, Comics & Graphic Novels, 71, Computing & Internet, 72, Crime, Thrillers & Mystery, 637262, e-Books, 279254, Fantasy, 62, Fiction, 66, Food & Drink, 275835, Gay & Lesbian, 74, Health, Family & Lifestyle, 65, History, 64, Home & Garden, 63, Horror, 89, Humour, 275738, Languages, 61, Mind, Body & Spirit, 73, Music, Stage & Screen, 275389, Poetry, Drama & Criticism, 59, Reference, 58, Religion & Spirituality, 88, Romance, 57, Science & Nature, 279292, Science Fiction, 564334, Scientific, Technical & Medical, 60, Society, Politics & Philosophy, 55, Sports, Hobbies & Games, 13384091, Study Books, 83, Travel & Holiday, 266239, Books, 400530011, English, 400529011, Language (feature_browse-bin), 365481011, Refinements, 266239, Books, 492564011, Paperback, 492562011, Format (binding_browse-bin), 365481011, Refinements, 266239, Books, 182018031, Regular Size, 182016031, Font Size (format_browse-bin), 365481011, Refinements, 266239, Books

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Taschenbuch

ISBN: 3866280874

Paperback, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, 1025612, Subjects, 349777011, Antiquarian, Rare & Collectable, 91, Art, Architecture & Photography, 67, Biography, 68, Business, Finance & Law, 507848, Calendars, Diaries & Annuals, 69, Children's Books, 274081, Comics & Graphic Novels, 71, Computing & Internet, 72, Crime, Thrillers & Mystery, 496792, Education Studies & Teaching, 62, Fiction, 66, Food & Drink, 275835, Gay & Lesbian, 74, Health, Family & Lifestyle, 65, History, 64, Home & Garden, 63, Horror, 89, Humour, 275738, Languages, 61, Mind, Body & Spirit, 73, Music, Stage & Screen, 275389, Poetry, Drama & Criticism, 59, Reference, 58, Religion & Spirituality, 88, Romance, 5106747031, School Books, 57, Science & Nature, 4034595031, Science Fiction & Fantasy, 564334, Scientific, Technical & Medical, 60, Society, Politics & Philosophy, 55, Sports, Hobbies & Games, 83, Travel & Holiday, 52, Young Adult, 266239, Books

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics)

Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility.

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ISBN (ISBN-10): 3866280874
Taschenbuch
Herausgeber: Hartung-Gorre

Buch in der Datenbank seit 13.09.2008 00:14:04
Buch zuletzt gefunden am 01.11.2016 21:21:28
ISBN/EAN: 3866280874

ISBN - alternative Schreibweisen:
3-86628-087-4


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