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Air Gap Structures for Advanced Metallization Schemes - Development and Electrical Characterization
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Air Gap Structures for Advanced Metallization Schemes - Development and Electrical Characterization - Taschenbuch

2008, ISBN: 9783639060881

[ED: Taschenbuch / Paperback], [PU: VDM Verlag Dr. Müller], The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials., [SC: 0.00], Neuware, gewerbliches Angebot, 22 cm, [GW: 226g]

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Air Gap Structures for Advanced Metallization Schemes - Stich Andreas
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Air Gap Structures for Advanced Metallization Schemes - neues Buch

2008, ISBN: 9783639060881

ID: 143623216

The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated; air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials. Development and Electrical Characterization Bücher > Fremdsprachige Bücher > Englische Bücher Taschenbuch 01.09.2008, VDM, .200

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Air Gap Structures for Advanced Metallization Schemes - Andreas Stich
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Andreas Stich:
Air Gap Structures for Advanced Metallization Schemes - neues Buch

ISBN: 9783639060881

ID: 972be1cf21ae1c9e2f9e66019f243fd1

The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials. Bücher / Naturwissenschaften, Medizin, Informatik & Technik / Technik, [PU: VDM Verlag Dr. Müller, Saarbrücken]

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Air Gap Structures for Advanced Metallization Schemes - Stich Andreas
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Stich Andreas:
Air Gap Structures for Advanced Metallization Schemes - neues Buch

ISBN: 9783639060881

ID: 526586192

The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated; air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials. Development and Electrical Characterization Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, VDM

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Air Gap Structures for Advanced Metallization Schemes - Andreas Stich
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Air Gap Structures for Advanced Metallization Schemes - neues Buch

ISBN: 9783639060881

ID: 972be1cf21ae1c9e2f9e66019f243fd1

The RC-delay and crosstalk noise of the interconnect, [PU: VDM Verlag Dr. Müller, Saarbrücken]

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Air Gap Structures for Advanced Metallization Schemes
Autor:

Stich Andreas

Titel:

Air Gap Structures for Advanced Metallization Schemes

ISBN-Nummer:

The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated; air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials.

Detailangaben zum Buch - Air Gap Structures for Advanced Metallization Schemes


EAN (ISBN-13): 9783639060881
ISBN (ISBN-10): 3639060881
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2008
Herausgeber: VDM Verlag
160 Seiten
Gewicht: 0,255 kg
Sprache: eng/Englisch

Buch in der Datenbank seit 03.01.2007 17:31:10
Buch zuletzt gefunden am 11.03.2017 17:52:59
ISBN/EAN: 9783639060881

ISBN - alternative Schreibweisen:
3-639-06088-1, 978-3-639-06088-1


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