Transport in Metal-Oxide-Semiconductor Structures Mobile Ions Effects on the Oxide Properties Hamid Bentarzi Buch Engineering Materials Englisch 2011 - gebunden oder broschiert
2011, ISBN: 9783642163036
[ED: Gebunden], [PU: Springer Berlin], This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) pro… Mehr…
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ISBN: 9783642163036
This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the de… Mehr…
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Transport in metal-oxide-semiconductor structures : mobile ions effects on the oxide properties. Engineering materials - gebunden oder broschiert
2011, ISBN: 9783642163036
XIII, 104 S. : graph. Darst. Gr.-8°, gebundene Ausgabe Gebraucht: sehr guter Zustand. Contents: Introduction / The MOS STructure / The MOS Oxide and its Defects / Review of Transport Mech… Mehr…
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2011, ISBN: 3642163033
Reviewing the state-of-the-art in the field, this volume describes the importance of mobile ions presented in oxide structures. The text defines the MOS structure, and provides an overvie… Mehr…
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Transport in Metal-Oxide-Semiconductor Structures Mobile Ions Effects on the Oxide Properties 2011 - gebrauchtes Buch
2011, ISBN: 9783642163036
2011 Neubindung, Buchschnitt leicht verkürzt, Buchrücken leicht angestoßen 9254899/12 Versandkostenfreie Lieferung density distribution,Ionic transport mechanism,MOS,Silicon dioxide,, [PU… Mehr…
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Transport in Metal-Oxide-Semiconductor Structures Mobile Ions Effects on the Oxide Properties Hamid Bentarzi Buch Engineering Materials Englisch 2011 - gebunden oder broschiert
2011, ISBN: 9783642163036
[ED: Gebunden], [PU: Springer Berlin], This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) pro… Mehr…
ISBN: 9783642163036
This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the de… Mehr…
Transport in metal-oxide-semiconductor structures : mobile ions effects on the oxide properties. Engineering materials - gebunden oder broschiert
2011
ISBN: 9783642163036
XIII, 104 S. : graph. Darst. Gr.-8°, gebundene Ausgabe Gebraucht: sehr guter Zustand. Contents: Introduction / The MOS STructure / The MOS Oxide and its Defects / Review of Transport Mech… Mehr…
2011, ISBN: 3642163033
Reviewing the state-of-the-art in the field, this volume describes the importance of mobile ions presented in oxide structures. The text defines the MOS structure, and provides an overvie… Mehr…
Transport in Metal-Oxide-Semiconductor Structures Mobile Ions Effects on the Oxide Properties 2011 - gebrauchtes Buch
2011, ISBN: 9783642163036
2011 Neubindung, Buchschnitt leicht verkürzt, Buchrücken leicht angestoßen 9254899/12 Versandkostenfreie Lieferung density distribution,Ionic transport mechanism,MOS,Silicon dioxide,, [PU… Mehr…
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Detailangaben zum Buch - Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties
EAN (ISBN-13): 9783642163036
ISBN (ISBN-10): 3642163033
Gebundene Ausgabe
Erscheinungsjahr: 2011
Herausgeber: Springer Berlin
104 Seiten
Gewicht: 0,322 kg
Sprache: eng/Englisch
Buch in der Datenbank seit 2009-01-19T16:17:44+01:00 (Berlin)
Detailseite zuletzt geändert am 2023-09-21T17:27:32+02:00 (Berlin)
ISBN/EAN: 9783642163036
ISBN - alternative Schreibweisen:
3-642-16303-3, 978-3-642-16303-6
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: bent, hamid
Titel des Buches: transport, metal, structure, mobile, oxide
Daten vom Verlag:
Autor/in: Hamid Bentarzi
Titel: Engineering Materials; Transport in Metal-Oxide-Semiconductor Structures - Mobile Ions Effects on the Oxide Properties
Verlag: Springer; Springer Berlin
106 Seiten
Erscheinungsjahr: 2011-01-16
Berlin; Heidelberg; DE
Gedruckt / Hergestellt in Niederlande.
Sprache: Englisch
106,99 € (DE)
109,99 € (AT)
118,00 CHF (CH)
POD
XIV, 106 p.
BB; Hardcover, Softcover / Technik/Maschinenbau, Fertigungstechnik; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Verstehen; Ingenieurwissenschaften; Ionic transport mechanism; MOS; Silicon dioxide; density distribution; Optical Materials; Semiconductors; Characterization and Analytical Technique; Condensed Matter Physics; Elektronische Geräte und Materialien; Werkstoffprüfung; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); BC
This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.Reviewed state-of-the-art Comprehensive for students Improves the understanding of transport phenomena Includes supplementary material: sn.pub/extras
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