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Synthesis And Characterization Of Copper Oxide Nanowires - Marianna Perdiki
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Synthesis And Characterization Of Copper Oxide Nanowires - Taschenbuch

ISBN: 9783659311451

ID: 9783659311451

CuO Nanowires as Semiconductors Copper oxide nanowires are source of a great interest in the scientific community due to numerous properties and the wide range of possible applications of this nanoscale material. In this project, CuO nanowire growth was achieved using an atmospheric pressure chemical vapor deposition (APCVD) reactor via dry oxidation at various temperatures and gas flow rates. The growth of nanowires was successful, when the substrate was a thin copper foil. In our experiments, copper oxide nanowires formed at 600 oC with ramp rate = 30 C/min. Afterwards, transport of nanowires on p+Si(001) was studied using an ultrasonicator. The best results of transfer were found when the ultrasonication lasted twenty seconds. In this case, 1.82 ml of solution with nanowires was dropped on the surface of silicon, which was successfully covered with copper oxide nanowires. The photoluminescence (PL) spectrum at 300 K consisted of a broad peak centered at 419 nm. Moreover, time correlated single photon counting (TCSPC) PL measurements were taken at room temperature (RT) for 400 nm emission wavelength over a time span of 50 ns. Synthesis And Characterization Of Copper Oxide Nanowires: Copper oxide nanowires are source of a great interest in the scientific community due to numerous properties and the wide range of possible applications of this nanoscale material. In this project, CuO nanowire growth was achieved using an atmospheric pressure chemical vapor deposition (APCVD) reactor via dry oxidation at various temperatures and gas flow rates. The growth of nanowires was successful, when the substrate was a thin copper foil. In our experiments, copper oxide nanowires formed at 600 oC with ramp rate = 30 C/min. Afterwards, transport of nanowires on p+Si(001) was studied using an ultrasonicator. The best results of transfer were found when the ultrasonication lasted twenty seconds. In this case, 1.82 ml of solution with nanowires was dropped on the surface of silicon, which was successfully covered with copper oxide nanowires. The photoluminescence (PL) spectrum at 300 K consisted of a broad peak centered at 419 nm. Moreover, time correlated single photon counting (TCSPC) PL measurements were taken at room temperature (RT) for 400 nm emission wavelength over a time span of 50 ns., LAP Lambert Academic Publishing

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Synthesis And Characterization Of Copper Oxide Nanowires CuO Nanowires as Semiconductors - Marianna Perdiki
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Synthesis And Characterization Of Copper Oxide Nanowires CuO Nanowires as Semiconductors - Taschenbuch

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LAP LAMBERT Academic Publishing. Paperback. New. Paperback. 164 pages. Dimensions: 8.7in. x 5.9in. x 0.4in.Copper oxide nanowires are source of a great interest in the scientific community due to numerous properties and the wide range of possible applications of this nanoscale material. In this project, CuO nanowire growth was achieved using an atmospheric pressure chemical vapor deposition (APCVD) reactor via dry oxidation at various temperatures and gas flow rates. The growth of nanowires was successful, when the substrate was a thin copper foil. In our experiments, copper oxide nanowires formed at 600 oC with ramp rate 30 Cmin. Afterwards, transport of nanowires on pSi(001) was studied using an ultrasonicator. The best results of transfer were found when the ultrasonication lasted twenty seconds. In this case, 1. 82 ml of solution with nanowires was dropped on the surface of silicon, which was successfully covered with copper oxide nanowires. The photoluminescence (PL) spectrum at 300 K consisted of a broad peak centered at 419 nm. Moreover, time correlated single photon counting (TCSPC) PL measurements were taken at room temperature (RT) for 400 nm emission wavelength over a time span of 50 ns. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN., LAP LAMBERT Academic Publishing

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Synthesis And Characterization Of Copper Oxide Nanowires - Marianna Perdiki
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Marianna Perdiki:
Synthesis And Characterization Of Copper Oxide Nanowires - Taschenbuch

2013, ISBN: 3659311456

ID: 10409380778

[EAN: 9783659311451], Neubuch, [PU: Lap Lambert Academic Publishing Feb 2013], This item is printed on demand - Print on Demand Titel. - Copper oxide nanowires are source of a great interest in the scientific community due to numerous properties and the wide range of possible applications of this nanoscale material. In this project, CuO nanowire growth was achieved using an atmospheric pressure chemical vapor deposition (APCVD) reactor via dry oxidation at various temperatures and gas flow rates. The growth of nanowires was successful, when the substrate was a thin copper foil. In our experiments, copper oxide nanowires formed at 600 oC with ramp rate = 30 C/min. Afterwards, transport of nanowires on p+Si(001) was studied using an ultrasonicator. The best results of transfer were found when the ultrasonication lasted twenty seconds. In this case, 1.82 ml of solution with nanowires was dropped on the surface of silicon, which was successfully covered with copper oxide nanowires. The photoluminescence (PL) spectrum at 300 K consisted of a broad peak centered at 419 nm. Moreover, time correlated single photon counting (TCSPC) PL measurements were taken at room temperature (RT) for 400 nm emission wavelength over a time span of 50 ns. 164 pp. Englisch

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Synthesis And Characterization Of Copper Oxide Nanowires - Marianna Perdiki
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Marianna Perdiki:
Synthesis And Characterization Of Copper Oxide Nanowires - Taschenbuch

2013, ISBN: 3659311456

ID: 10409380778

[EAN: 9783659311451], Neubuch, [PU: Lap Lambert Academic Publishing Feb 2013], This item is printed on demand - Print on Demand Titel. - Copper oxide nanowires are source of a great interest in the scientific community due to numerous properties and the wide range of possible applications of this nanoscale material. In this project, CuO nanowire growth was achieved using an atmospheric pressure chemical vapor deposition (APCVD) reactor via dry oxidation at various temperatures and gas flow rates. The growth of nanowires was successful, when the substrate was a thin copper foil. In our experiments, copper oxide nanowires formed at 600 oC with ramp rate = 30 C/min. Afterwards, transport of nanowires on p+Si(001) was studied using an ultrasonicator. The best results of transfer were found when the ultrasonication lasted twenty seconds. In this case, 1.82 ml of solution with nanowires was dropped on the surface of silicon, which was successfully covered with copper oxide nanowires. The photoluminescence (PL) spectrum at 300 K consisted of a broad peak centered at 419 nm. Moreover, time correlated single photon counting (TCSPC) PL measurements were taken at room temperature (RT) for 400 nm emission wavelength over a time span of 50 ns. 164 pp. Englisch

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Synthesis And Characterization Of Copper Oxide Nanowires - Marianna Perdiki
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Synthesis And Characterization Of Copper Oxide Nanowires - neues Buch

ISBN: 9783659311451

ID: dbdceae4ca42f683cf645dbd3286c41d

Copper oxide nanowires are source of a great interest in the scientific community due to numerous properties and the wide range of possible applications of this nanoscale material. In this project, CuO nanowire growth was achieved using an atmospheric pressure chemical vapor deposition (APCVD) reactor via dry oxidation at various temperatures and gas flow rates. The growth of nanowires was successful, when the substrate was a thin copper foil. In our experiments, copper oxide nanowires formed at 600 oC with ramp rate = 30 C/min. Afterwards, transport of nanowires on p+Si(001) was studied using an ultrasonicator. The best results of transfer were found when the ultrasonication lasted twenty seconds. In this case, 1.82 ml of solution with nanowires was dropped on the surface of silicon, which was successfully covered with copper oxide nanowires. The photoluminescence (PL) spectrum at 300 K consisted of a broad peak centered at 419 nm. Moreover, time correlated single photon counting (TCSPC) PL measurements were taken at room temperature (RT) for 400 nm emission wavelength over a time span of 50 ns. Bücher / Naturwissenschaften, Medizin, Informatik & Technik / Physik & Astronomie / Theoretische Physik

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EAN (ISBN-13): 9783659311451
ISBN (ISBN-10): 3659311456
Taschenbuch
Erscheinungsjahr: 2013
Herausgeber: Lap Lambert Academic Publishing Feb 2013

Buch in der Datenbank seit 03.01.2014 16:58:52
Buch zuletzt gefunden am 29.09.2017 21:20:45
ISBN/EAN: 9783659311451

ISBN - alternative Schreibweisen:
3-659-31145-6, 978-3-659-31145-1


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