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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Zhiqiang Li
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Zhiqiang Li:
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - neues Buch

1, ISBN: 9783662496817

[ED: Buch], [PU: Springer-Verlag GmbH], Neuware - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.810-7O.cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node., DE, [SC: 0.00], Neuware, gewerbliches Angebot, FixedPrice, 108, [GW: 276g], offene Rechnung (Vorkasse vorbehalten), PayPal, Banküberweisung

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Zhiqiang Li
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Zhiqiang Li:
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - neues Buch

ISBN: 9783662496817

[ED: Buch], [PU: Springer-Verlag GmbH], Neuware - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.810-7O.cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node., DE, [SC: 0.00], Neuware, gewerbliches Angebot, 244x159x12 mm, 59, [GW: 271g], Banküberweisung, PayPal

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Zhiqiang Li
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Zhiqiang Li:
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - neues Buch

ISBN: 9783662496817

[ED: Buch], [PU: Springer-Verlag GmbH], Neuware - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.810-7 -cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node. -, [SC: 0.00], Neuware, gewerbliches Angebot, 244x159x12 mm, [GW: 271g]

Neues Buch Booklooker.de
Rhein-Team Lörrach
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(*) Derzeit vergriffen bedeutet, dass dieser Titel momentan auf keiner der angeschlossenen Plattform verfügbar ist.
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Zhiqiang Li
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Zhiqiang Li:
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - neues Buch

ISBN: 9783662496817

[ED: Buch], [PU: Springer-Verlag GmbH], Neuware - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.810-7 -cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node., [SC: 0.00], Neuware, gewerbliches Angebot, 244x159x12 mm, [GW: 271g]

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - Zhiqiang Li
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Zhiqiang Li:
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices - neues Buch

1, ISBN: 9783662496817

[ED: Buch], [PU: Springer-Verlag GmbH], Neuware - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.810-7 -cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node. -, [SC: 0.00], Neuware, gewerbliches Angebot, 235x155x mm, [GW: 276g]

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Details zum Buch
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Autor:

Zhiqiang Li

Titel:

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

ISBN-Nummer:

Detailangaben zum Buch - The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices


EAN (ISBN-13): 9783662496817
ISBN (ISBN-10): 366249681X
Gebundene Ausgabe
Erscheinungsjahr: 1
Herausgeber: Springer-Verlag Gmbh

Buch in der Datenbank seit 08.03.2016 20:29:30
Buch zuletzt gefunden am 12.07.2017 01:16:28
ISBN/EAN: 9783662496817

ISBN - alternative Schreibweisen:
3-662-49681-X, 978-3-662-49681-7


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