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Strain-Induced Effects in Advanced MOSFETs - Sverdlov, Viktor
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Sverdlov, Viktor:
Strain-Induced Effects in Advanced MOSFETs - gebrauchtes Buch

2010, ISBN: 9783709103814

ID: EN_9783709103814

comprehensive overview of strain techniques  accurate description of strain induced modifications of the valence and conduction bands overview of transport modeling in strain devices Inhaltsverzeichnis: 1 Introduction 2 Scaling, Power Consumption, and Mobility Enhancement Techniques 3 Strain and Stress 4 Basic Properties of the Silicon Lattice 5 Band Structure of Relaxed Silicon 6 Perturbative Methods for Band Structure Calculations in Silicon 7 Strain Effects on the Silicon Crystal Structure 8 Strain Effects on the Silicon Band Structure 9 Strain Effects on the Conduction Band of Silicon 10 Electron Subbands in Silicon in the Effective Mass Approximation 11 Electron Subbands in Thin Silicon Films 12 Demands of Transport Modeling in Advanced MOSFETs Klappentext: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given., Springer-Verlag KG, 2010, [Bücher/Elektronik/Elektrotechnik/Nachrichtentechnik], [SW:Elektronik / Mikroelektronik], [LA:ENG], [GW:633 g], [MW:7.0%]

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(*) Derzeit vergriffen bedeutet, dass dieser Titel momentan auf keiner der angeschlossenen Plattform verfügbar ist.
Strain-Induced Effects in Advanced MOSFETs - Sverdlov, Viktor
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Sverdlov, Viktor:
Strain-Induced Effects in Advanced MOSFETs - gebrauchtes Buch

2010, ISBN: 9783709103814

ID: EN_9783709103814

comprehensive overview of strain techniques  accurate description of strain induced modifications of the valence and conduction bands overview of transport modeling in strain devices Inhaltsverzeichnis: 1 Introduction 2 Scaling, Power Consumption, and Mobility Enhancement Techniques 3 Strain and Stress 4 Basic Properties of the Silicon Lattice 5 Band Structure of Relaxed Silicon 6 Perturbative Methods for Band Structure Calculations in Silicon 7 Strain Effects on the Silicon Crystal Structure 8 Strain Effects on the Silicon Band Structure 9 Strain Effects on the Conduction Band of Silicon 10 Electron Subbands in Silicon in the Effective Mass Approximation 11 Electron Subbands in Thin Silicon Films 12 Demands of Transport Modeling in Advanced MOSFETs Klappentext: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given., Springer-Verlag KG, 2010, [Bücher/Elektronik/Elektrotechnik/Nachrichtentechnik], [SW:Elektronik / Mikroelektronik], [LA:ENG], [GW:633 g], [MW:7.0%]

gebrauchtes bzw. antiquarisches Buch Biblioman.de
Hofbuchhandlung Löwenberg
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Details...
(*) Derzeit vergriffen bedeutet, dass dieser Titel momentan auf keiner der angeschlossenen Plattform verfügbar ist.
Strain-Induced Effects in Advanced MOSFETs - Viktor Sverdlov
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Viktor Sverdlov:
Strain-Induced Effects in Advanced MOSFETs - neues Buch

ISBN: 9783709103814

[ED: Buch], [PU: Springer-Verlag KG], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given., [SC: 0.00], Neuware, gewerbliches Angebot, 251x155x18 mm, [GW: 633g]

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(*) Derzeit vergriffen bedeutet, dass dieser Titel momentan auf keiner der angeschlossenen Plattform verfügbar ist.
Strain-Induced Effects in Advanced MOSFETs - Viktor Sverdlov
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Viktor Sverdlov:
Strain-Induced Effects in Advanced MOSFETs - neues Buch

ISBN: 9783709103814

[ED: Buch], [PU: Springer-Verlag KG], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given., [SC: 0.00], Neuware, gewerbliches Angebot, 251x155x18 mm, [GW: 633g]

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Sellonnet GmbH
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(*) Derzeit vergriffen bedeutet, dass dieser Titel momentan auf keiner der angeschlossenen Plattform verfügbar ist.
Strain-Induced Effects in Advanced MOSFETs - Viktor Sverdlov
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Viktor Sverdlov:
Strain-Induced Effects in Advanced MOSFETs - neues Buch

ISBN: 9783709103814

[ED: Buch], [PU: Springer-Verlag KG], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given., [SC: 0.00], Neuware, gewerbliches Angebot, FixedPrice, [GW: 633g]

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Details zum Buch
Strain-Induced Effects in Advanced MOSFETs
Autor:

Sverdlov, Viktor

Titel:

Strain-Induced Effects in Advanced MOSFETs

ISBN-Nummer:

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Detailangaben zum Buch - Strain-Induced Effects in Advanced MOSFETs


EAN (ISBN-13): 9783709103814
ISBN (ISBN-10): 3709103819
Gebundene Ausgabe
Erscheinungsjahr: 2010
Herausgeber: Springer-Verlag KG
252 Seiten
Gewicht: 0,633 kg
Sprache: eng/Englisch

Buch in der Datenbank seit 09.04.2011 21:17:05
Buch zuletzt gefunden am 16.06.2016 02:39:55
ISBN/EAN: 9783709103814

ISBN - alternative Schreibweisen:
3-7091-0381-9, 978-3-7091-0381-4


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