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4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors - Denis Perrone
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4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors - neues Buch

7, ISBN: 9783838380643

ID: 601127735

Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si - based counterpart. In particular, SiC - based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on - axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs. Process and characterization techniques Bücher > Fremdsprachige Bücher > Englische Bücher Taschenbuch 07.2010 Buch (fremdspr.), LAP Lambert Academic Publishing, 07.2010

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4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors - Denis Perrone
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7, ISBN: 9783838380643

ID: 426384962

Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si - based counterpart. In particular, SiC - based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on - axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs. Process and characterization techniques Bücher > Fremdsprachige Bücher > Englische Bücher Taschenbuch 07.2010, LAP Lambert Academic Publishing, 07.2010

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4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors - Denis Perrone
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ISBN: 9783838380643

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Process and characterization techniques Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si - based counterpart. In particular, SiC - based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on - axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs. Bücher / Fremdsprachige Bücher / Englische Bücher 978-3-8383-8064-3, LAP Lambert Academic Publishing

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4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors - Taschenbuch

ISBN: 9783838380643

[ED: Taschenbuch], [PU: LAP Lambert Acad. Publ.], Neuware - Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high power and high frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si based counterpart. In particular, SiC based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs., [SC: 0.00], Neuware, gewerbliches Angebot, 221x151x10 mm, [GW: 191g]

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4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors - Denis Perrone
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Denis Perrone:
4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors - neues Buch

ISBN: 9783838380643

ID: 0bd95eb1d920b870486758bea1908ac8

Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high power and high frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si based counterpart. In particular, SiC based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs. Bücher / Naturwissenschaften, Medizin, Informatik & Technik / Technik / Elektronik & Elektrotechnik

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4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors
Autor:

Perrone, Denis

Titel:

4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors

ISBN-Nummer:

Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si - based counterpart. In particular, SiC - based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on - axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs.

Detailangaben zum Buch - 4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors


EAN (ISBN-13): 9783838380643
ISBN (ISBN-10): 3838380649
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2010
Herausgeber: LAP Lambert Acad. Publ.
116 Seiten
Gewicht: 0,189 kg
Sprache: eng/Englisch

Buch in der Datenbank seit 30.07.2008 12:01:24
Buch zuletzt gefunden am 27.12.2016 07:51:55
ISBN/EAN: 9783838380643

ISBN - alternative Schreibweisen:
3-8383-8064-9, 978-3-8383-8064-3


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