2026, ISBN: 9783838380643

[ED: Taschenbuch], [PU: LAP LAMBERT Academic Publishing], Neuware - Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high power and high frequency electronic devic… Mehr…

[ED: Taschenbuch], [PU: LAP LAMBERT Academic Publishing], Neuware - Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high power and high frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si based counterpart. In particular, SiC based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs., DE, [SC: 0.00], Neuware, gewerbliches Angebot, 220x150x7 mm, 116, [GW: 191g], Banküberweisung, PayPal, International shipping<

2010, ISBN: 9783838380643

gewerbliches Angebot, [SC: 0.00], Neuware, [PU: LAP LAMBERT Academic Publishing], 116, [GW: 191g], [ED: Taschenbuch], DE, Silicon Carbide (SiC) is a semiconductor employed for the fabrica… Mehr…

gewerbliches Angebot, [SC: 0.00], Neuware, [PU: LAP LAMBERT Academic Publishing], 116, [GW: 191g], [ED: Taschenbuch], DE, Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high ¿ power and high ¿ frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si ¿ based counterpart. In particular, SiC ¿ based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on ¿ axis mobility. This book provides to the researchers in the..., Banküberweisung, PayPal, [CT: Sonstiges / Sonstiges]<

ISBN: 9783838380643

Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or Ga… Mehr…

Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si - based counterpart. In particular, SiC - based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on - axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs. New Textbooks>Trade Paperback>Science>Engineering>ELEC Engr, LAP Lambert Academic Publishing Core >1 >T<

2010, ISBN: 9783838380643

LAP LAMBERT Academic Publishing, Taschenbuch, 116 Seiten, Publiziert: 2010-07-26T00:00:01Z, Produktgruppe: Buch, 0.18 kg, Elektronik, Elektrotechnik, Ingenieurwissenschaft & Technik, Natu… Mehr…

LAP LAMBERT Academic Publishing, Taschenbuch, 116 Seiten, Publiziert: 2010-07-26T00:00:01Z, Produktgruppe: Buch, 0.18 kg, Elektronik, Elektrotechnik, Ingenieurwissenschaft & Technik, Naturwissenschaften & Technik, Kategorien, Bücher, Verschiedenes, Englische Bücher, 7c9a6c79-19ea-4dea-90da-d7d47042d341_2301, 7c9a6c79-19ea-4dea-90da-d7d47042d341_0, Arborist Merchandising Root, Fremdsprachige Bücher, acc906d0-2585-4921-a56f-3ff277850936_4901, acc906d0-2585-4921-a56f-3ff277850936_0, Special Features Stores, Taschenbücher, acc906d0-2585-4921-a56f-3ff277850936_4201, LAP LAMBERT Academic Publishing, 2010<

ISBN: 9783838380643

*4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors 4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors * - Process and characterization techniques / Ta… Mehr…

*4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors 4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors * - Process and characterization techniques / Taschenbücher für 48.99€ / Aus dem Bereich: Bücher-Wissenschaft-Technik Taschenbücher Buch (kartoniert) no Medien > Bücher Hardcover > Naturwissenschaften, Medizin, Informatik, Technik > Elektronik, Elektrotechnik, Nachrichtentechnik, LAP LAMBERT Academic Publishing<