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Optimization and Characterization of GaN-Based High Electron Mobility Transistors - Sun, Haifeng
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Sun, Haifeng:
Optimization and Characterization of GaN-Based High Electron Mobility Transistors - Taschenbuch

1, ISBN: 3844006834

ID: 162104

1., Aufl. Paperback 165 S. Broschiert Because of their outstanding combination of physical properties, GaN-based high-electron-mobility transistors (HEMTs) are very attractive components for highpower, high-speed, and high-temperature applications. This dissertation focuses on highly scaled GaN-based HEMTs for millimeter-wave frequencies.A device fabrication process for fully-passivated GaN HEMTs was developed. The two principal isolation technologies of mesa dry-etching and ion implantation were implemented and compared. Low resistance Ohmic contacts were achieved. The T-shaped gate process was implemented for GaN HEMTs, enabling the gate lengths shorter than 0.1 µm to be realized.High-performance AlGaN/GaN HEMTs grown on high-resistivity silicon (HR-Si) substrates were implemented. Multiple records were set for the switching speed of AlGaN/GaN HEMTs on silicon substrates: from 75 GHz, 90 GHz, and 114 GHz to a new record now of 130 GHz. These are to be contrasted to the previous published record of 27 GHz for a 0.1 µm GaN HEMT on Silicon: a near 5-fold improvement was achieved, proving the interest of GaN-on-Si for millimeter-wave applications. Our devices also feature a noise figure Fmin = 0.65 (1.2-1.3) dB and associated gain GA = 12 (9.3) dB at 10 (20) GHz. A comparison of the microwave small-signal performance of 0.1 µm HEMTs on HR-Si and on insulating sapphire was performed. The extracted small-signal equivalent circuit models revealed no differences attributable to the different substrates.This thesis has also defined the state-of-the-art performance on AlInN/GaNHEMTs. A record fT of 143 GHz and fMAX of 176 GHz were demonstrated for GaNon-SiHEMTs. An even higher fT of 205 GHz was achieved on SiC substrate, the highest ever reported for AlInN/GaN HEMTs to date. This is also the first demonstration of fT beyond 200 GHz on any GaN-based HEMTs. The microwave noise performance of AlInN/GaN HEMTs was also characterized for the first time. At 10 (20) GHz, our devices feature a noise figure Fmin = 0.62 (1.5) dB andassociated gain GA = 15.4 (13.3) dB. The Fmin values are among the lowest reportedin nitride HEMTs and the GA values are the best so far found in the literature. ISBN 9783844006834 GaN, GaN-on-Silicon, AlInN, High Electron Mobility Transistors, HEMTs, mit Schutzumschlag neu, [PU:Shaker,]

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Optimization and Characterization of GaN-Based High Electron Mobility Transistors  1., Aufl. - Sun, Haifeng
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Sun, Haifeng:
Optimization and Characterization of GaN-Based High Electron Mobility Transistors 1., Aufl. - Taschenbuch

1, ISBN: 9783844006834

ID: 162104

1., Aufl. 165 S. Paperback Because of their outstanding combination of physical properties, GaN-based high-electron-mobility transistors (HEMTs) are very attractive components for highpower, high-speed, and high-temperature applications. This dissertation focuses on highly scaled GaN-based HEMTs for millimeter-wave frequencies.A device fabrication process for fully-passivated GaN HEMTs was developed. The two principal isolation technologies of mesa dry-etching and ion implantation were implemented and compared. Low resistance Ohmic contacts were achieved. The T-shaped gate process was implemented for GaN HEMTs, enabling the gate lengths shorter than 0.1 µm to be realized.High-performance AlGaN/GaN HEMTs grown on high-resistivity silicon (HR-Si) substrates were implemented. Multiple records were set for the switching speed of AlGaN/GaN HEMTs on silicon substrates: from 75 GHz, 90 GHz, and 114 GHz to a new record now of 130 GHz. These are to be contrasted to the previous published record of 27 GHz for a 0.1 µm GaN HEMT on Silicon: a near 5-fold improvement was achieved, proving the interest of GaN-on-Si for millimeter-wave applications. Our devices also feature a noise figure Fmin = 0.65 (1.2-1.3) dB and associated gain GA = 12 (9.3) dB at 10 (20) GHz. A comparison of the microwave small-signal performance of 0.1 µm HEMTs on HR-Si and on insulating sapphire was performed. The extracted small-signal equivalent circuit models revealed no differences attributable to the different substrates.This thesis has also defined the state-of-the-art performance on AlInN/GaNHEMTs. A record fT of 143 GHz and fMAX of 176 GHz were demonstrated for GaNon-SiHEMTs. An even higher fT of 205 GHz was achieved on SiC substrate, the highest ever reported for AlInN/GaN HEMTs to date. This is also the first demonstration of fT beyond 200 GHz on any GaN-based HEMTs. The microwave noise performance of AlInN/GaN HEMTs was also characterized for the first time. At 10 (20) GHz, our devices feature a noise figure Fmin = 0.62 (1.5) dB andassociated gain GA = 15.4 (13.3) dB. The Fmin values are among the lowest reportedin nitride HEMTs and the GA values are the best so far found in the literature. ISBN 9783844006834 Versand D: 2,30 EUR GaN, GaN-on-Silicon, AlInN, High Electron Mobility Transistors, HEMTs, [PU:Shaker,]

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Optimization and Characterization of GaN-Based High Electron Mobility Transistors - Haifeng Sun
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Haifeng Sun:
Optimization and Characterization of GaN-Based High Electron Mobility Transistors - Taschenbuch

ISBN: 9783844006834

[ED: Taschenbuch], [PU: Shaker Verlag], Neuware - Because of their outstanding combination of physical properties, GaN-based high-electron-mobility transistors (HEMTs) are very attractive components for highpower, high-speed, and high-temperature applications. This dissertation focuses on highly scaled GaN-based HEMTs for millimeter-wave frequencies. A device fabrication process for fully-passivated GaN HEMTs was developed. The two principal isolation technologies of mesa dry-etching and ion implantation were implemented and compared. Low resistance Ohmic contacts were achieved. The T-shaped gate process was implemented for GaN HEMTs, enabling the gate lengths shorter than 0.1 m to be realized. High-performance AlGaN/GaN HEMTs grown on high-resistivity silicon (HR-Si) substrates were implemented. Multiple records were set for the switching speed of AlGaN/GaN HEMTs on silicon substrates: from 75 GHz, 90 GHz, and 114 GHz to a new record now of 130 GHz. These are to be contrasted to the previous published record of 27 GHz for a 0.1 m GaN HEMT on Silicon: a near 5-fold improvement was achieved, proving the interest of GaN-on-Si for millimeter-wave applications. Our devices also feature a noise figure Fmin = 0.65 (1.2-1.3) dB and associated gain GA = 12 (9.3) dB at 10 (20) GHz. A comparison of the microwave small-signal performance of 0.1 m HEMTs on HR-Si and on insulating sapphire was performed. The extracted small-signal equivalent circuit models revealed no differences attributable to the different substrates. This thesis has also defined the state-of-the-art performance on AlInN/GaN HEMTs. A record fT of 143 GHz and fMAX of 176 GHz were demonstrated for GaNon-Si HEMTs. An even higher fT of 205 GHz was achieved on SiC substrate, the highest ever reported for AlInN/GaN HEMTs to date. This is also the first demonstration of fT beyond 200 GHz on any GaN-based HEMTs. The microwave noise performance of AlInN/GaN HEMTs was also characterized for the first time. At 10 (20) GHz, our devices feature a noise figure Fmin = 0.62 (1.5) dB and associated gain GA = 15.4 (13.3) dB. The Fmin values are among the lowest reported in nitride HEMTs and the GA values are the best so far found in the literature., [SC: 0.00], Neuware, gewerbliches Angebot, 211x149x12 mm, [GW: 240g]

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Optimization and Characterization of GaN-Based High Electron Mobility Transistors - Haifeng Sun
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Haifeng Sun:
Optimization and Characterization of GaN-Based High Electron Mobility Transistors - neues Buch

ISBN: 9783844006834

[ED: Buch], [PU: Shaker Verlag], Neuware - Because of their outstanding combination of physical properties, GaN-based high-electron-mobility transistors (HEMTs) are very attractive components for highpower, high-speed, and high-temperature applications. This dissertation focuses on highly scaled GaN-based HEMTs for millimeter-wave frequencies. A device fabrication process for fully-passivated GaN HEMTs was developed. The two principal isolation technologies of mesa dry-etching and ion implantation were implemented and compared. Low resistance Ohmic contacts were achieved. The T-shaped gate process was implemented for GaN HEMTs, enabling the gate lengths shorter than 0.1 m to be realized. High-performance AlGaN/GaN HEMTs grown on high-resistivity silicon (HR-Si) substrates were implemented. Multiple records were set for the switching speed of AlGaN/GaN HEMTs on silicon substrates: from 75 GHz, 90 GHz, and 114 GHz to a new record now of 130 GHz. These are to be contrasted to the previous published record of 27 GHz for a 0.1 m GaN HEMT on Silicon: a near 5-fold improvement was achieved, proving the interest of GaN-on-Si for millimeter-wave applications. Our devices also feature a noise figure Fmin = 0.65 (1.2-1.3) dB and associated gain GA = 12 (9.3) dB at 10 (20) GHz. A comparison of the microwave small-signal performance of 0.1 m HEMTs on HR-Si and on insulating sapphire was performed. The extracted small-signal equivalent circuit models revealed no differences attributable to the different substrates. This thesis has also defined the state-of-the-art performance on AlInN/GaN HEMTs. A record fT of 143 GHz and fMAX of 176 GHz were demonstrated for GaNon-Si HEMTs. An even higher fT of 205 GHz was achieved on SiC substrate, the highest ever reported for AlInN/GaN HEMTs to date. This is also the first demonstration of fT beyond 200 GHz on any GaN-based HEMTs. The microwave noise performance of AlInN/GaN HEMTs was also characterized for the first time. At 10 (20) GHz, our devices feature a noise figure Fmin = 0.62 (1.5) dB and associated gain GA = 15.4 (13.3) dB. The Fmin values are among the lowest reported in nitride HEMTs and the GA values are the best so far found in the literature., [SC: 0.00], Neuware, gewerbliches Angebot, FixedPrice, [GW: 248g]

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Optimization and characterization of GaN-based high electron mobility transistors. - Sun, Haifeng
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2012, ISBN: 9783844006834

[PU: Aachen : Shaker], VIII, 153 S. : Ill., graph. Darst. 21 cm, 248 g kart. ISBN 9783844006834, [SC: 2.30], Neuware, gewerbliches Angebot, [GW: 550g], 1. Aufl.

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Details zum Buch
Optimization and characterization of GaN-based high electron mobility transistors.
Autor:

Sun, Haifeng

Titel:

Optimization and characterization of GaN-based high electron mobility transistors.

ISBN-Nummer:

Detailangaben zum Buch - Optimization and characterization of GaN-based high electron mobility transistors.


EAN (ISBN-13): 9783844006834
ISBN (ISBN-10): 3844006834
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2012
Herausgeber: Aachen : Shaker

Buch in der Datenbank seit 01.12.2014 16:30:36
Buch zuletzt gefunden am 06.07.2017 15:24:27
ISBN/EAN: 9783844006834

ISBN - alternative Schreibweisen:
3-8440-0683-4, 978-3-8440-0683-4


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