ISBN: 9783319316512
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulation… Mehr…
| BarnesandNoble.com new in stock. Versandkosten:zzgl. Versandkosten. Details... |
ISBN: 9783319316512
Hardback, [PU: Springer International Publishing AG], This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will lea… Mehr…
| BookDepository.com Versandkosten:Versandkostenfrei. (EUR 0.00) Details... |
2016, ISBN: 3319316516
[EAN: 9783319316512], Gebraucht, guter Zustand, [SC: 8.75], [PU: Springer International Publishing], LOW POWER SRAM DESIGN,TUNNELING FIELD EFFECT TRANSISTORS,TFETS,NANOWIRE TRANSISTORS,NA… Mehr…
| ZVAB.com Buchpark, Trebbin, Germany [83435977] [Rating: 5 (von 5)] NOT NEW BOOK. Versandkosten: EUR 8.75 Details... |
ISBN: 9783319316512
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulation… Mehr…
| Springer.com Nr. 978-3-319-31651-2. Versandkosten:Worldwide free shipping, , DE. (EUR 0.00) Details... |
2016, ISBN: 9783319316512
[PU: Springer International Publishing], Gepflegter, sauberer Zustand. Außen: Buchschnitt verkürzt. 26627128/12, DE, [SC: 29.90], gebraucht; sehr gut, gewerbliches Angebot, 1st ed. 2016, … Mehr…
| booklooker.de |
ISBN: 9783319316512
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulation… Mehr…
ISBN: 9783319316512
Hardback, [PU: Springer International Publishing AG], This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will lea… Mehr…
2016
ISBN: 3319316516
[EAN: 9783319316512], Gebraucht, guter Zustand, [SC: 8.75], [PU: Springer International Publishing], LOW POWER SRAM DESIGN,TUNNELING FIELD EFFECT TRANSISTORS,TFETS,NANOWIRE TRANSISTORS,NA… Mehr…
ISBN: 9783319316512
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulation… Mehr…
2016, ISBN: 9783319316512
[PU: Springer International Publishing], Gepflegter, sauberer Zustand. Außen: Buchschnitt verkürzt. 26627128/12, DE, [SC: 29.90], gebraucht; sehr gut, gewerbliches Angebot, 1st ed. 2016, … Mehr…
Bibliographische Daten des bestpassenden Buches
| Autor: | |
| Titel: | |
| ISBN-Nummer: |
Detailangaben zum Buch - Tunneling Field Effect Transistor Technology Lining Zhang Editor
EAN (ISBN-13): 9783319316512
ISBN (ISBN-10): 3319316516
Gebundene Ausgabe
Erscheinungsjahr: 2016
Herausgeber: Springer International Publishing Core >2
Buch in der Datenbank seit 2016-08-16T03:34:22+02:00 (Berlin)
Detailseite zuletzt geändert am 2024-03-29T16:19:57+01:00 (Berlin)
ISBN/EAN: 9783319316512
ISBN - alternative Schreibweisen:
3-319-31651-6, 978-3-319-31651-2
Alternative Schreibweisen und verwandte Suchbegriffe:
Titel des Buches: the field, tunnel, transistor, tunneling
Daten vom Verlag:
Autor/in: Lining Zhang; Mansun Chan
Titel: Tunneling Field Effect Transistor Technology
Verlag: Springer; Springer International Publishing
213 Seiten
Erscheinungsjahr: 2016-04-15
Cham; CH
Gedruckt / Hergestellt in Niederlande.
Sprache: Englisch
106,99 € (DE)
109,99 € (AT)
118,00 CHF (CH)
POD
IX, 213 p. 147 illus., 122 illus. in color.
BB; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Schaltkreise und Komponenten (Bauteile); Verstehen; Carbon Nanotube TFETs; Low Power SRAM Design; MOSFETs; Nanoscaled Field Effect Transistors; Nanowire Field Effect Transistors; TFETs; Tunneling Field Effect Transistors; Electronic Circuits and Systems; Electronics and Microelectronics, Instrumentation; Elektronik; EA; BC
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications;· Enables design of power-efficient integrated circuits, with low power consumption TFETs.comprehensive reference to tunneling field effect transistors (TFETs) all aspects of TFETs, from device process to modeling and applications Enables design of power-efficient integrated circuits, with low power consumption TFETs
Weitere, andere Bücher, die diesem Buch sehr ähnlich sein könnten:
Neuestes ähnliches Buch:
9783319810874 Tunneling Field Effect Transistor Technology (Zhang, Lining Chan, Mansun)
< zum Archiv...