Simulation of Semiconductor Processes and Devices 2001 / Dimitris Tsoukalas (u. a.) / Buch / Englisch / 2001 / Springer Wien / EAN 9783211837085 - gebunden oder broschiert

EAN (ISBN-13): 9783211837085
ISBN (ISBN-10): 3211837086
Gebundene Ausgabe
Erscheinungsjahr: 2014
Herausgeber: Springer Wien

Buch in der Datenbank seit 2007-04-26T20:55:25+02:00 (Berlin)
Detailseite zuletzt geändert am 2022-11-26T08:04:56+01:00 (Berlin)
ISBN/EAN: 9783211837085

ISBN - alternative Schreibweisen:
3-211-83708-6, 978-3-211-83708-5
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: tsami, tsamis, christos, tsoukalas, christo
Titel des Buches: 2001, simulation

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Daten vom Verlag:

Autor/in: Dimitris Tsoukalas; Christos Tsamis
Titel: Simulation of Semiconductor Processes and Devices 2001 - SISPAD 01
Verlag: Springer; Springer Wien
455 Seiten
Erscheinungsjahr: 2001-08-21
Vienna
Sprache: Englisch
213,99 € (DE)
219,99 € (AT)
236,00 CHF (CH)
Available
XV, 455 p.

BB; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; CMOS; Diffusion; Double-diffused metal-oxide-semiconductor transistor; Fluctuation; Leistungsfeldeffekttransistor; Modeling; Monte Carlo; Nanotube; Transistor; Transport; field-effect transistor; heterojunction bipolar transistor; metal semiconductor field-effect transistor; quantum dot; thin film; Electronics and Microelectronics, Instrumentation; Optical Materials; Nanotechnology; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Nanotechnologie; BC

Macroscopic Quantum Carrier Transport Modeling.- Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication.- Monte Carlo Impurity Diffusion Simulation Considering Charged Species.- A Novel Model for Boron Diffusion in SiGe Strained Layers Based on a Kinetics Driven Ge-B Pairing Mechanism.- The Role of Incomplete Interstitial-Vacancy Recombination on Silicon Amorphization.- Atomistic Simulations of Extrinsic-Defects Evolution and Transient Enhanced Diffusion in Silicon.- Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach.- Local Iterative Monte Carlo Investigation of the Influence of Electron-Electron Scattering on Short Channel Si-MOSFETs.- Simplified Inelastic Acoustic-Phonon Hole Scattering Model for Silicon.- An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects.- Density of States and Group Velocity Calculations for SiO2.- Investigation of Spurious Velocity Overshoot Using Monte Carlo Data.- Elasto-Plastic Modeling of Microelectronics Materials for Accurate Prediction of the Mechanical Stresses in Advanced Silicon Technologies.- A Unified Model of Dopant Diffusion in SiGe.- A Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Si1-xGex, by Carbon Insertion.- On the Effect of Local Electronic Stopping on Ion Implantation Profiles in Non-Crystalline Targets.- Dynamics of p+ Polysilicon Gate Depletion due to the Formation of Boron Compounds in TiSi2.- Analysis of Statistical Fluctuations due to Line Edge Roughness in Sub-0.1 µm MOSFETs.- Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential.- Finite Element Simulation of 2D Quantum Effects in Ultra Short Channel MOSFETs with High-K DielectricGates.- Decananometer FDSOI Device Optimization Including Random Variation.- Fully 2D Quantum-Mechanical Simulation of Nanoscale MOSFETs.- Ab-initio Electrodynamic Modeling of On-Chip Back-End Structures.- Analysis of Hot-Carrier-Induced Oxide Degradation in MOSFETs by Means of Full-Band Monte Carlo Simulation.- Acceleration of Lattice Monte Carlo Simulations and Application to Diffusion/Clustering of As at High Concentrations.- Interstitial Cluster Evolution and Transient Phenomena in Si-Crystal.- Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD.- Equipment and Process Simulation of Compound Semiconductor MOCVD in the Production Scale Multiwafer Planetary Reactor.- Numerical Simulation of Non-Equilibrium, Ultra-Rapid Heating of Si-Thin films by Nanosecond-Pulse Excimer Laser.- 2D Hierarchical Radio-Frequency Noise Modeling Based on a Langevin-Type Drift-Diffusion Model and Full-Band Monte-Carlo Generated Local Noise Sources.- Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation.- Analysis of Gate Tunneling Current in MOS Structures using Quantum Mechanical Simulation.- 2-D Self-Consistent Solution of Schrödinger Equation, Boltzmann Transport Equation, Poisson and Current-continuity Equation for MOSFET.- Boundary Condition Models for Terminal Current Fluctuations.- Electron velocity in sub-50 nm channel MOSFETs.- 3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER.- Modeling of Reactive Ion Etching for Si/SiO2 Systems.- Simulation and Prediction of Aspect Ratio Dependent Phenomena during SiO2 and Si Feature Etching in Fluorocarbon Plasmas.- System Level Modeling of an Electrostatic Torsional Actuator.- Impact of SubstrateResistance on Drain Current Noise in MOSFETs.- An Efficient Frequency-Domain Analysis Technique of MOSFET Operation.- Modeling of Bias Dependent Fluctuations of Flicker Noise of MOSFETs.- Compact MOS Modeling for RF CMOS Circuit Simulation.- Statistical Analysis of VLSI Using TCAD.- Numerical Modeling of Impact-Ionization Effects on Gate-Lag Phenomena in GaAs MESFETs.- Monte Carlo Simulation of Multi-Band Carrier Transport in Semiconductor Materials with Complex Unit Cells.- Modeling Semiconductor Carbon Nanotube Rectifying Heterojunctions.- Simulation of Vertical CEO-FETs by a Coupled Solution of the Schrödinger Equation with a Hydrodynamic Transport Model.- A Computational Efficient Method for HBT Intermodulation Distortions and Two-Tone Characteristics Simulation.- Modeling the Impact of Body-to-Body Leakage in Partially -Depleted SOI CMOS Technology.- Compact Device Model for Partially Depleted SOI-MOSFETs.- Two-Dimensional Model for the Subthreshold Slope in Deep-Submicron Fully Depleted SOI MOSFETs.- 3D Thermal Analysis for SOI and its impact on Circuit Performance.- Modelling of High-Voltage SOI-LDMOS Transistors Including Self-Heating.- An Efficient Tool for Extraction of Interconnect Models in Submicron Layouts.- A Comparative Study of Two Numerical Techniques for Inductance Calculation in Interconnect Structures.- Comparison of Finite Element Stress Simulation with X-Ray Measurement for the Aluminum Conductors with different Passivation Topography.- A New Compact Spice-like Model of E2PROM Memory Cells Suitable for DC and Transient Simulations.- Simulation of Flash Memory Programming Characteristics.- A Figure of Merit for Flash Memory Multi-Layer Tunnel Dielectrics.- Enhanced Diffusion of Phosphorus due to BPSG layer in SEG-MOSFETs.- Neutron-SER Modelingand Simulation for 0.18µm CMOS Technology.- TCAD Driven Process Design of 0.151.1m Fully Depleted SOI Transistor for Low-Power Applications.- A Simulation Evaluation of 100nm CMOS Device Performance.- A Practical Approach to Modeling Strained Silicon NMOS Devices.- Accounting for Quantum Effects and Polysilicon Depletion in an Analytical Design-Oriented MOSFET Model.- Investigations of Salicided and Salicide-Blocked MOSFETs for ESD Including ESD Simulation.- Bipolar Transistor's Intrinsic and Extrinsic Capacitance Determination.- Varying Characteristics of Bipolar Transistors with Emitter Contact Window Width.- Ensemble Monte Carlo Particle Modeling of InGaAs/InP Uni-TravelingCarrier Photodiodes.- An Effective Methodology for Predicting the Distribution of MOSFET Device Characteristics Using Statistical TCAD Simulations.- Quantum Mechanical Balance Equations for Modeling Transport in Closed Electric Circuits.- A Nonlinear Iterative Method for InAs/GaAs Semiconductor Quantum Dots Simulation.- The modeling of a SOI microelectromechanical sensor.- A Computationally Efficient Model for Three-dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures.- A Full-Wave Analysis for Multi-Level Interconnects Using FDTD-PML method.- Differences Between Quantum-Mechanical Capacitance-Voltage Simulators.- Investigation of a Novel Rapid Thermal Processing Concept Using an Electro-Optically Controlled Radiation Cavity.- A Shared Architecture for a Dynamic Technology Simulation Repository.- Level Set Modeling of Profile Evolution during Deposition Process.- Parameter and Coupling Ratio Extraction for SPICE-Compatible MACRO Modeling of Source Side Injection (SSI) Flash Cell.- Theoretical Calculation of a Charged Particle Detector's Response, Fabricated by SemiInsulating (SI) GaAs.- Stress Modeling of Multi Level Interconnect Schemes for Future Deep Submicron Device Generations.- Robust Method for Fast and Accurate Simulation of Random Dopant Fluctuation-Induced Vth Variation in MOSFETs with Arbitrary Complex Doping Distribution.- An Agent-Based Common Software Platform Applied to Multi-scale Device and Process simulations.- Simulation of Dark Count in Geiger Mode Avalanche Photodiodes.- Device Simulation and Measurement of Hybrid SBTT.- Two-Dimensional Diffusion Characterization of Boron in Silicon Using Reverse Modeling.- Simulation of Advanced n-MOSFET Emphasizing Quantum Mechanical Effects on 2-D Characteristics.- Vth Model of Pocket-Implant MOSFETs for Circuit Simulation.- Electrothermal Device Simulation of an ESD Protection Structure Based on Bipolar DC Characteristics.- Characterization of Low-Frequency Noise of MOSFETs Using the 2-D Device Simulator.- Electron Beam Lithography Simulation for Subquartermicron and High-Density Patterns.- Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High-Voltage Applications.- Analysis of Ultra-short MOSFETs with High-k Gate Dielectrics.- TCAD Analysis of Gain Cell Retention Time for SRAM Applications.- Optimization for TCAD Purposes Using Bernstein Polynomials.- Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation.- A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization.- A Review of Modeling Issues for RF Heterostructure Device Simulation.- Modeling and Simulation of Charge Generation Events Caused by Ion Irradiation in High-Voltage Power Devices.- Determination of the Radiation Efficiency, Contrast and Sensitivity in Electron and Ion Lithography.- Author Index.