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Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations - Taschenbuch

2013, ISBN: 3642409040

[EAN: 9783642409042], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], ELECTRONTRANSPORT; ENERGYBANDSTRUCTURES; STRUCTURALSTABILITY; SURFACEENGINEERING; SILICONNANOWIRES; GROWTHMECHA… Mehr…

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Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations  Rui-Qin Zhang  Taschenbuch  SpringerBriefs in Molecular Science  Paperback  Englisch  2013 - Zhang, Rui-Qin
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Zhang, Rui-Qin:

Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations Rui-Qin Zhang Taschenbuch SpringerBriefs in Molecular Science Paperback Englisch 2013 - Taschenbuch

2013, ISBN: 9783642409042

[ED: Taschenbuch], [PU: Springer Berlin], In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum do… Mehr…

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Rui-Qin Zhang:
Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations - Taschenbuch

ISBN: 9783642409042

Paperback, [PU: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG], In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and prop… Mehr…

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ISBN: 9783642409042

In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: me… Mehr…

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Rui-Qin Zhang:
Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations - Taschenbuch

2013, ISBN: 9783642409042

Buch, Softcover, 2014, [PU: Springer Berlin], Springer Berlin, 2013

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Details zum Buch

Detailangaben zum Buch - Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations


EAN (ISBN-13): 9783642409042
ISBN (ISBN-10): 3642409040
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2013
Herausgeber: Springer Berlin

Buch in der Datenbank seit 2014-03-11T15:22:05+01:00 (Berlin)
Detailseite zuletzt geändert am 2022-06-04T12:35:52+02:00 (Berlin)
ISBN/EAN: 9783642409042

ISBN - alternative Schreibweisen:
3-642-40904-0, 978-3-642-40904-2
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: qin, rui
Titel des Buches: calc, silicon, novel, cal, mechanica, mechanical properties, qin, zhang


Daten vom Verlag:

Autor/in: Rui-Qin Zhang
Titel: SpringerBriefs in Molecular Science; Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations
Verlag: Springer; Springer Berlin
66 Seiten
Erscheinungsjahr: 2013-12-05
Berlin; Heidelberg; DE
Gedruckt / Hergestellt in Niederlande.
Sprache: Englisch
53,49 € (DE)
54,99 € (AT)
59,00 CHF (CH)
POD
VIII, 66 p. 31 illus., 15 illus. in color.

BC; Hardcover, Softcover / Chemie/Theoretische Chemie; Quanten- und theoretische Chemie; Verstehen; Chemie; Electron Transport; Energy Band Structures; Growth Mechanism; Phonon Transport; Silicon Nanotubes; Silicon Nanowires; Silicon Quantum Dots; Silicon nanostructure; Structural Stability; Surface engineering; Theoretical Chemistry; Nanotechnology; Nanophysics; Characterization and Analytical Technique; Nanotechnologie; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Nanowissenschaften; Werkstoffprüfung; EA

In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.

Introduction.- Growth mechanism of silicon nanowires.- Stability of silicon nanostructures.- Novel electronic properties of silicon nanostructures.- Summary and remarks.

Prof. Zhang is currently a professor at the Department of Physics and Materials Science, City University of Hong Kong. Prof. Zhang’s research area is Computational Materials Physics and Chemistry, including: (1) energetics, kinetics and dynamics of materials nucleation and growth; (2) nano- and micro-structures and related properties of systems in materials science, surface science and chemistry; and (3) development of related methodologies and theories. His recent research focus is on nanoscience, including interactions of nanomaterials with chemical and biological systems, aiming at promoting the applications of nanostructured materials in energy-related and chemical, biological and environmental areas. He has published over 260 papers in internationally refereed journals and 5 book chapters in the areas of Chemical Physics, Materials Science, Condensed Matter Physics and Surface Science. His work has been cited more than 4000 times and his H-index has reached 32. Prof. Zhang hasbeen honored with (1) a Third-class State Natural Science Award of China in 1997, (2) a First-class Award of Scientific and Technological Development of China in 1997, (3) a Friedrich Wilhelm Bessel Research Award (http://www.avh.de/en/programme/preise/index.htm) from the Alexander von Humboldt Foundation, Germany in 2004, and (4) a Second-class State Natural Science Award of China in 2005.

This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.


Comprehensively shows the growth mechanisms and properties of silicon nanostructures Covers computational studies that address different aspects of the science and technology of silicon nanostructures Includes silicon quantum dots, nanotubes and nanowires Provides an atomic-level understanding of oxide-assisted growth and possible novel property engineering approaches for silicon nanostructures Includes supplementary material: sn.pub/extras

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