Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
ISBN: 9783709119334
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Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
2016, ISBN: 3709119332
[EAN: 9783709119334], Neubuch, [SC: 0.0], [PU: Springer Vienna Aug 2016], SEMICONDUCTOR DEVICES; STRAIN TECHNIQUE; TRANSPORT MODELING, Neuware - Strain is used to boost performance of MOS… Mehr…
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Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
ISBN: 9783709119334
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Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
2016, ISBN: 9783709119334
Softcover reprint of the original 1st ed. 2011, Softcover, Buch, [PU: Springer Wien]
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Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
ISBN: 9783709119334
[ED: Taschenbuch], [PU: Springer Vienna], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools… Mehr…
Viktor Sverdlov:
Strain-Induced Effects in Advanced MOSFETs - Taschenbuch2016, ISBN: 3709119332
[EAN: 9783709119334], Neubuch, [SC: 0.0], [PU: Springer Vienna Aug 2016], SEMICONDUCTOR DEVICES; STRAIN TECHNIQUE; TRANSPORT MODELING, Neuware - Strain is used to boost performance of MOS… Mehr…
Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
ISBN: 9783709119334
Paperback, [PU: SPRINGER VERLAG GMBH], Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for… Mehr…
Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
2016, ISBN: 9783709119334
Softcover reprint of the original 1st ed. 2011, Softcover, Buch, [PU: Springer Wien]
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Detailangaben zum Buch - Strain-Induced Effects in Advanced MOSFETs
EAN (ISBN-13): 9783709119334
ISBN (ISBN-10): 3709119332
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2016
Herausgeber: Springer Wien
Buch in der Datenbank seit 2017-08-31T17:55:17+02:00 (Berlin)
Detailseite zuletzt geändert am 2020-12-13T12:15:22+01:00 (Berlin)
ISBN/EAN: 3709119332
ISBN - alternative Schreibweisen:
3-7091-1933-2, 978-3-7091-1933-4
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: viktor, vik
Titel des Buches: mosfets, mosfet, viktor
Daten vom Verlag:
Autor/in: Viktor Sverdlov
Titel: Computational Microelectronics; Strain-Induced Effects in Advanced MOSFETs
Verlag: Springer; Springer Wien
252 Seiten
Erscheinungsjahr: 2016-08-23
Vienna
Gedruckt / Hergestellt in Niederlande.
Sprache: Englisch
160,49 € (DE)
164,99 € (AT)
177,00 CHF (CH)
POD
XIV, 252 p.
BC; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; semiconductor devices; strain technique; transport modeling; Electronics and Microelectronics, Instrumentation; BB
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is givencomprehensive overview of strain techniques accurate description of strain induced modifications of the valence and conduction bands overview of transport modeling in strain devices Includes supplementary material: sn.pub/extras
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